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Patent
Defect analysis
11/22/2011
Abstract
In one embodiment, a method to analyze a semiconductor wafer comprises extracting inline defect data from a data source, counting a total number of inline defects and end-of-line defects, terminating the analysis when the total number of inline defects and end-of-line defects exceeds a threshold, and mapping the inline defects onto the end-of-line defects when the total number of inline defects and end-of-line defects is less than a threshold.
Details
- Title
- Defect analysis
- Resource Type
- Patent
- Format
- pdf
- Number of pages
- 9
- Identifiers
- 99380176595006600
- Academic Unit
- Hal Marcus College of Science and Engineering
- Language
- English
- Patent
- US 8,064,682 B2; B2