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Solid State Magnetic Field Sensor With Zero Power Consumption
Journal article   Peer reviewed

Solid State Magnetic Field Sensor With Zero Power Consumption

Ezzat G. Bakhoum
IEEE transactions on components, packaging, and manufacturing technology (2011), Vol.4(1), pp.86-93
01/2014
DOI: https://doi.org/10.1109/TCPMT.2013.2279796
Web of Science ID: WOS:000329518500010

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2 Times Cited - Web of Science

Abstract

This paper introduces a new type of solid-state magnetic field sensor that is similar in size to a Hall effect sensor and that offers a sensitivity that is approximately an order of magnitude better than a Hall effect sensor. The significant advantage of the new sensor, however, is that it consumes no power. The sensor consists of a radioactive β-particle source and a silicon p-n junction. If no magnetic field is applied, the β particles enter the p-n junction and generate a steady dc voltage. Under the influence of a magnetic field, however, the β particles (or secondary electrons generated therefrom) follow a curved path and miss the p-n junction, and the magnitude of the output voltage drops. The new sensor will be very advantageous in battery-powered consumer products applications because it consumes no power.

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